Electrically Erasable Programmable Read-Only Memory - Definition. Was ist Electrically Erasable Programmable Read-Only Memory
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Was (wer) ist Electrically Erasable Programmable Read-Only Memory - definition

NONVOLATILE MEMORY COMPRISING ARRAYS OF FLOATING-GATE TRANSISTORS USED IN COMPUTERS, MICROCONTROLLERS &C. TO STORE RELATIVELY SMALL AMOUNTS OF DATA BUT ALLOWING INDIVIDUAL BYTES TO BE ERASED/REPROGRAMMED IN-CIRCUIT THROUGH SPECIAL PROGRAMMING SIGNALS
Electrically Erasable Programmable Read-Only Memory; Electrically erasable programmable read-only memory; E²PROM; SEEPROM; Electrically alterable read-only memory; E2PROM; EECMOS; Eecmos; Eeprom; EEPROM memory chip; EEP ROM; EEP-ROM; Electrically erasable programmable ROM
  • STMicro]] [http://www.st.com/resource/en/datasheet/m24c02-f.pdf M24C02] [[I²C]] serial type EEPROM
  • die]]
  • MCU]] integrates 512 Byte EEPROM
  • memory cell]]
  • memory cell]]
  • oxide]]
  • SIM card]]

Electrically Erasable Programmable Read-Only Memory         
<storage> (EEPROM) A non-volatile storage device using a technique similar to the floating gates in EPROMs but with the capability to discharge the floating gate electrically. Usually bytes or words can be erased and reprogrammed individually during system operation. In contrast to RAM, writing takes much longer than reading and EEPROM is more expensive and less dense than RAM. It is appropriate for storing small amounts of data which is changed infrequently, e.g. the hardware configuration of an Acorn Archimedes. [Difference from EAPROM?] (1995-04-22)
EEPROM         
EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, integrated in microcontrollers for smart cards and remote keyless systems, and other electronic devices to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.
EEPROM         
Electronically Erasable Programmable Read-Only Memory

Wikipedia

EEPROM

EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.

EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration.

Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512 bytes or larger) and limited number of write cycles (often 10,000). There is no clear boundary dividing the two, but the term "EEPROM" is generally used to describe non-volatile memory with small erase blocks (as small as one byte) and a long lifetime (typically 1,000,000 cycles). Many past microcontrollers included both (flash memory for the firmware and a small EEPROM for parameters), though the trend with modern microcontrollers is to emulate EEPROM using flash.

As of 2020, flash memory costs much less than byte-programmable EEPROM and is the dominant memory type wherever a system requires a significant amount of non-volatile solid-state storage. EEPROMs, however, are still used on applications that only require small amounts of storage, like in serial presence detect.