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Etymologie

germanium transistor - Übersetzung nach russisch

CHEMICAL COMPOUND

Silicon-Germanium-On-Insulator; Silicon germanium on insulator; Sgoi; Silicon germanium; Silicon germanide; Germanium silicide; SiGe; Silicon-germanium

germanium transistor

общая лексика

германиевый транзистор

transistor-transistor logic

CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION

Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)

общая лексика

ТТЛ

транзисторно-транзисторная логика

вычислительная техника

логика транзистор-транзисторная

drift transistor

TYPE OF BIPOLAR JUNCTION TRANSISTOR

Drift transistor; Graded-base transistor; Graded base transistor

общая лексика

дрейфовый транзистор

Definition

Transistor-Transistor Logic

(TTL) A common semiconductor technology for building discrete digital logic integrated circuits. It originated from {Texas Instruments} in 1965. There have been several series of TTL logic: 7400: 10 ns propagation time, 10 mW/gate power consumption, obsolete; 74L00: Low power: higher resistances, less dissipation (1 mW), longer propagation time (30 ns); 74H00: High power: lower resistances, more dissipation: less sensitivity for noise; 74S00: Schottky-clamped: faster switching (3 ns, 19 mW) by using Schottky diodes to prevent the transistors from saturation; 74LS00: Low power, Schottky-clamped (10 ns, 2 mW); 74AS00: Advanced Schottky: faster switching, less dissipation, (1.5 ns, 10 mW); 74ALS00: Advanced Low power Schottky (4 ns, 1.3 mW). For each 74xxx family there is a corresponding 54xxx family. The 74 series are specified for operation at 0 - 70 C whereas the 54 (military) series can operate at -55 - 125 C See also CMOS, ECL.

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Wikipedia

Silicon–germanium

SiGe ( or ), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si_1−xGe_x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).

https://en.wikipedia.org/wiki/Silicon–germanium

Übersetzung von &#39germanium transistor&#39 in Russisch