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Τι (ποιος) είναι Ferroelectric Random Access Memory - ορισμός

FORM OF COMPUTER DATA STORAGE

R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick

Ferroelectric Random Access Memory

<storage> (FRAM) A type of non-volatile read/write {random access} semiconductor memory. FRAM combines the advantages of SRAM - writing is roughly as fast as reading, and EPROM - non-volatility and in-circuit programmability. Current (Feb 1997) disadvantages are high cost and low density, but that may change in the future. Density is currently at most 32KB on a chip, compared with 512KB for SRAM, 1MB for EPROM and 8MB for DRAM. A ferroelectric memory cell consists of a ferroelectric capacitor and a MOS transistor. Its construction is similar to the storage cell of a DRAM. The difference is in the dielectric properties of the material between the capacitor's electrodes. This material has a high dielectric constant and can be polarized by an electric field. The polarisation remains until it gets reversed by an opposite electrical field. This makes the memory non-volatile. Note that ferroelectric material, despite its name, does not necessarily contain iron. The most well-known ferroelectric substance is BaTiO3, which does not contain iron. Data is read by applying an electric field to the capacitor. If this switches the cell into the opposite state (flipping over the electrical dipoles in the ferroelectric material) then more charge is moved than if the cell was not flipped. This can be detected and amplified by sense amplifiers. Reading destroys the contents of a cell which must therefore be written back after a read. This is similar to the precharge operation in DRAM, though it only needs to be done after a read rather than periodically as with DRAM refresh. In fact it is most like the operation of {ferrite core memory}. FRAM has similar applications to EEPROM, but can be written much faster. The simplicity of the memory cell promises high density devices which can compete with DRAM. RAMTRON is the company behind FRAM. (1997-02-17)

shadow ram

<operating system> A memory area in PC-AT compatibles used to store frequently accessed ROM code to speed up operation. (1995-01-16)

random-access memory

<storage> (RAM) (Previously "direct-access memory"). A data storage device for which the order of access to different locations does not affect the speed of access. This is in contrast to, say, a magnetic disk, magnetic tape or a mercury delay line where it is very much quicker to access data sequentially because accessing a non-sequential location requires physical movement of the storage medium rather than just electronic switching. In the 1970s magnetic core memory was used and some old-timers still call RAM "core". The most common form of RAM in use today is semiconductor integrated circuits, which can be either static random-access memory (SRAM) or {dynamic random-access memory} (DRAM). The term "RAM" has gained the additional meaning of read-write. Most kinds of semiconductor read-only memory (ROM) are actually "random access" in the above sense but are never referred to as RAM. Furthermore, memory referred to as RAM can usually be read and written equally quickly (approximately), in contrast to the various kinds of programmable read-only memory. Finally, RAM is usually volatile though non-volatile random-access memory is also used. Interestingly, some DRAM devices are not truly random access because various kinds of "page mode" or "column mode" mean that sequential access is faster than random access. The humorous expansion "Rarely Adequate Memory" refers to the fact that programs and data always seem to expand to fill the memory available. (2007-10-12)

Βικιπαίδεια

Random-access memory

Random-access memory (RAM; ) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

RAM contains multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be "8-bit" or "16-bit", etc. devices.

In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM).

Non-volatile RAM has also been developed and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash.

Use of semiconductor RAM dated back to 1965, when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used discrete DRAM memory cells for its 180-bit Toscal BC-1411 electronic calculator, both based on bipolar transistors. While it offered higher speeds than magnetic-core memory, bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory.

MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970.

Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.

https://en.wikipedia.org/wiki/RAM

Παραδείγματα από το σώμα κειμένου για Ferroelectric Random Access Memory

1. Texas Instruments Inc. and other companies are working with Colorado–based Ramtron International Corp. to develop higher–capacity chips using FRAM, or ferroelectric random–access memory.