Noun
/ɡʌn ˈdaɪ.oʊd əˈmplɪfər/
A Gunn diode amplifier is a type of electronic amplifier that utilizes a Gunn diode, which is a semiconductor device capable of producing microwave oscillations. It is primarily used in high-frequency devices, such as in communication systems. The term "Gunn diode" derives from the name of physicist John Battiscombe Gunn, who first identified the unusual properties of semiconductor materials that led to the invention of the Gunn diode.
The frequency of use for this term is typically within technical and engineering contexts, particularly in electronics, telecommunications, and related fields. It is more common in written technical documents and academic articles than in oral speech due to its specialized nature.
Устройство гунновского диодного усилителя может значительно увеличить выходную мощность микроволновых передающих систем.
The development of a high-efficiency Gunn diode amplifier has led to advancements in radar technology.
Разработка высокоэффективного гунновского диодного усилителя привела к прогрессу в радиолокационных технологиях.
Engineers often choose a Gunn diode amplifier for applications requiring stable oscillation at microwave frequencies.
The term "Gunn diode amplifier" does not feature prominently in idiomatic expressions commonly used in English due to its technical nature. However, in the context of electronics and amplifiers, several relevant phrases can be associated with the term:
В технологии это означает выход за пределы текущих показателей производительности, подобно тому, как гунновский диодный усилитель достигает более высоких частот.
In the zone: Refers to being in a state of optimal performance, akin to how a Gunn diode amplifier operates efficiently in specific frequency ranges.
Относится к состоянию оптимальной работы, подобно тому, как гунновский диодный усилитель эффективно работает в определенных диапазонах частот.
Turn up the volume: While this phrase usually refers to increasing sound levels, in technical contexts, it can refer to enhancing the signal strength of devices like the Gunn diode amplifier.
The term Gunn diode is named after John Battiscombe Gunn, who discovered the operation of this type of diode in the 1960s. The "diode" part of the term comes from the Greek word "di-" meaning two and "odes" meaning way or path, which refers to the two-electrode configuration typical of diodes.
In summary, the Gunn diode amplifier is a specialized component in high-frequency electronics, recognized for its unique capabilities derived from its design and the materials used to create it.