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Schottky barrier - traducción al ruso
![[[Schottky transistor]] effective circuit](https://commons.wikimedia.org/wiki/Special:FilePath/Schottky-Transistor-ersatz.svg?width=200 "[[Schottky transistor]] effective circuit")
![For a very high Schottky barrier (in this case, almost as high as the band gap), the forward bias current is carried by minority carrier injection (the white arrow shows the injection of an [[electron hole]] into the semiconductor's valence band).](https://commons.wikimedia.org/wiki/Special:FilePath/Schottky barrier minority carrier injection.svg?width=200 "For a very high Schottky barrier (in this case, almost as high as the band gap), the forward bias current is carried by minority carrier injection (the white arrow shows the injection of an [[electron hole]] into the semiconductor's valence band).")
![[[Band diagram]] for ''n''-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the '''Schottky barrier height''', Φ<sub>B</sub>, as the difference between the interfacial [[conduction band]] edge ''E''<sub>C</sub> and [[Fermi level]] ''E''<sub>F</sub>. ''[For a ''p''-type Schottky barrier, Φ<sub>B</sub> is the difference between E<sub>F</sub> and the valence band edge E<sub>V</sub>.]''](https://commons.wikimedia.org/wiki/Special:FilePath/Schottky barrier zero bias.svg?width=200 "[[Band diagram]] for ''n''-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the '''Schottky barrier height''', Φ<sub>B</sub>, as the difference between the interfacial [[conduction band]] edge ''E''<sub>C</sub> and [[Fermi level]] ''E''<sub>F</sub>. ''[For a ''p''-type Schottky barrier, Φ<sub>B</sub> is the difference between E<sub>F</sub> and the valence band edge E<sub>V</sub>.]''")
общая лексика
барьер Шоттки
общая лексика
диод с барьером Шоттки
Definición
Wikipedia
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor.
Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact.
