DRAM refresh - définition. Qu'est-ce que DRAM refresh
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Qu'est-ce (qui) est DRAM refresh - définition

PROCESS OF PERIODICALLY READING INFORMATION FROM AN AREA OF COMPUTER MEMORY AND IMMEDIATELY REWRITING THE READ INFORMATION TO THE SAME AREA WITHOUT MODIFICATION, FOR THE PURPOSE OF PRESERVING THE INFORMATION
RAM refresh; DRAM refresh; Memory refresh cycle; Memory refresh interval

DRAM refresh         
<storage> The operation which cycles through a DRAM reading each row and writing it back again to compensate for the gradual leakage of charge from the capacitors which store the data. This may be done by the CPU but is often done by a dedicated memory controller. (1997-02-23)
Memory refresh         
Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information."refresh cycle" in Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
vertical refresh rate         
  • frames per second]].
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FREQUENCY AT WHICH A DISPLAY HARDWARE DISPLAYS A NEW IMAGE
100 Hz; Field rate; Vertical refresh rate; Vertical scan rate; Vertical refresh; Refresh Rate; Screen frequency; Refresh frequency; Vertical scan
<hardware> Synonym for refresh rate. (1996-02-09)

Wikipédia

Memory refresh

Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.

In a DRAM chip, each bit of memory data is stored as the presence or absence of an electric charge on a small capacitor on the chip. As time passes, the charges in the memory cells leak away, so without being refreshed the stored data would eventually be lost. To prevent this, external circuitry periodically reads each cell and rewrites it, restoring the charge on the capacitor to its original level. Each memory refresh cycle refreshes a succeeding area of memory cells, thus repeatedly refreshing all the cells in a consecutive cycle. This process is conducted automatically in the background by the memory circuitry and is transparent to the user. While a refresh cycle is occurring the memory is not available for normal read and write operations, but in modern memory this "overhead" time is not large enough to significantly slow down memory operation.

Electronic memory that does not require refreshing is available, called static random-access memory (SRAM). SRAM circuits require more area on a chip, because an SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM. As a result, data density is much lower in SRAM chips than in DRAM, and SRAM has higher price per bit. Therefore, DRAM is used for the main memory in computers, video game consoles, graphics cards and applications requiring large capacities and low cost. The need for memory refresh makes DRAM timing and circuits significantly more complicated than SRAM circuits, but the density and cost advantages of DRAM justify this complexity.