Page Mode Dynamic Random Access Memory - définition. Qu'est-ce que Page Mode Dynamic Random Access Memory
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Qu'est-ce (qui) est Page Mode Dynamic Random Access Memory - définition

DYNAMIC RANDOM-ACCESS MEMORY INCLUDED IN A PROCESSOR CHIP OR PACKAGE
Embedded dynamic random access memory; Embedded DRAM

Page Mode Dynamic Random Access Memory      
<hardware, storage> A technique used to support faster sequential access to DRAM by allowing any number of accesses to the currently open row to be made after supplying the {row address} just once. The RAS signal is kept active, and with each falling edge of the CAS signal a new column address can be supplied and the corresponding bits can be accessed. This is faster than a full RAS-CAS cycle because only the shorter Column Access Time needs to be obeyed. Note that strictly speaking such a DRAM is not a true {random access memory} since accesses to the open row are faster than to other locations. EDO RAM is replacing Page Mode DRAM in many new microcomputers. [Is "Fast Page Mode" the same as "Page Mode"?] (1996-10-06)
MDRAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
Multibank Dynamic Random Access Memory (Reference: RAM, DRAM, IC)
FPM DRAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM

Wikipédia

EDRAM

Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms.

Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded SRAM, which raises cost, but the 3× area savings of eDRAM memory offsets the process cost when a significant amount of memory is used in the design.

eDRAM memories, like all DRAM memories, require periodic refreshing of the memory cells, which adds complexity. However, if the memory refresh controller is embedded along with the eDRAM memory, the remainder of the ASIC can treat the memory like a simple SRAM type such as in 1T-SRAM.

eDRAM is used in various products, including IBM's POWER7 processor, and IBM's z15 mainframe processor (mainframes built which use up to 4.69 GB of eDRAM when 5 such add-on chips/drawers are used but all other levels from L1 up also use eDRAM, for a total of 6.4 GB of eDRAM). Intel's Haswell CPUs with GT3e integrated graphics, many game consoles and other devices, such as Sony's PlayStation 2, Sony's PlayStation Portable, Nintendo's GameCube, Nintendo's Wii, Nintendo's Wii U, Apple Inc.'s iPhone, Microsoft's Zune HD, and Microsoft's Xbox 360 also use eDRAM.