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MOSFET$506086$ - перевод на Английский

TYPE OF MOSFET WHERE THE GATE IS ELECTRICALLY ISOLATD

Floating-gate transistor; Floating gate transistor; Floating Gate MOSFETs; Floating Gate Transistors; FGMOS; FG-MOS; Floating Gate Transistor; Floating gate transistors; Floating-gate transistors; Floating gate; FGMOSFET; Floating Gate MOSFET; Floating gate MOSFET; Floating-gate

MOSFET

veldeffecttransistor, waarin de transmissieschuif door isolering van het leidende kanaal is gescheiden, MOSFET (Elektronica)

metal oxide semiconductor field-effect transistor

TYPE OF FIELD-EFFECT TRANSISTOR

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veldeffecttransistor waarin de transmissieschuif gescheiden is van het leidende kanaal door isolering, MOSFET (Elektronica)

Определение

MOSFET

Metal Oxide Semiconductor Field Effect Transistor (Reference: IC, FET)

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Википедия

Floating-gate MOSFET

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, digital potentiometers and single-transistor DACs.

https://en.wikipedia.org/wiki/Floating-gate MOSFET